High-temperature reliability of AlGaN deep-UV light-emitting diodes for extreme environments
Swetha Velpula1,2, Mano Bala Sankar Muthu1,2, Ravi Teja Velpula1
1Department of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, USA.
Abstract:
We report on the reliability study of 264 nm AlGaN deep-UV light-emitting diodes (LEDs) under combined thermal and electrical stress. Temperature-dependent electroluminescence demonstrates retention of ∼20% of the room-temperature intensity at 400∘C. Moreover, the external quantum efficiency (EQE) remains invariant up to ∼250 mA at 450∘C, evidencing mitigation of carrier overflow, nonradiative recombination, and droop-associated losses. Long-term reliability testing reveals no measurable linewidth broadening over 5000 h, indicating negligible defect formation. These results establish efficient, stable, and highly reliable AlGaN deep-UV LEDs for prolonged operation in harsh environments, such as sterilization and gas sensing.
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