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Published on: January 28, 2019
High-efficiency slow-light modulator on thin-film lithium tantalate operating at high optical power
QingQing Han1, Yuqi Chen1, Min Sun1
1State Key Laboratory of Photonics and Communication, School of Information Science and Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Abstract:
Integrated electro-optic (EO) modulators are essential interfaces between electrical and optical signals, but maintaining high modulation efficiency and broadband EO response under high optical power remains challenging. Here, we demonstrate a thin-film lithium tantalate (TFLT) Mach-Zehnder modulator combining 1-mm-long one-dimensional topological slow-light waveguides with capacitively loaded T-shaped traveling-wave electrodes. The device achieves a minimum Vπ of 3 V at 1560.408 nm, corresponding to a VπL of 0.3 V·cm. At 1550, 1558.957, 1559.798, 1560.11, and 1560.408 nm, the extracted VπL values remain consistent at 0 and 35 dBm off-chip input, with the latter corresponding to an estimated on-chip optical power of ~27 dBm (~500 mW). Multi-wavelength EO S21 measurements show no 3-dB roll-off within the 67 GHz measurement range, with the broadband response preserved under high optical power. The device supports 75 Gb/s OOK and 80/100 Gb/s PAM4 transmission, which remain achievable under the high-power condition. These results demonstrate a high-efficiency, broadband TFLT slow-light modulator operating at high optical power.

