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Updated: Oct 24, 2026

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
Competing Magnetic Configurations Enable Low-Field Magnetoresistance Switching in Cr3Te4
Qian Chen1, Wei Jiang1, Jiaqi Bai1
1Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing211189, China.
Abstract:
Large magnetoresistance typically emerges from transitions between distinct electronic phases or magnetic configurations, yet controllable switching between competing magnetic configurations within a single metallic material remains challenging. Here we investigate magnetotransport in Cr3Te4 and demonstrate a magnetic-field-switchable resistance modulation of up to -37.6%, enabled by the near degeneracy between antiparallel and parallel magnetic configurations. Remarkably, a magnetic field of ∼0.25 T suffices to induce switching between these competing magnetic configurations, accompanied by a reconstruction in electronic transport supported by Boltzmann transport calculations. Substituting 5% of Cr with Co suppresses the switching behavior, consistent with a suppression of the competition between the nearly degenerate magnetic configurations, while the magnetoresistance evolves into a negative longitudinal magnetoresistance, suggesting a possible Weyl-band-related contribution associated with a Co-induced upward shift of the Fermi level. Our results establish competing magnetic configurations as an effective route toward large magnetoresistance in structurally simple metallic systems.
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