Related Experiment Video

Updated: Oct 24, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Berry curvature and valley topology modulation with electric field in twisted Graphene/hBN moiré heterostructures

Renu Sangwan1, Konstantin Petrovich Katin2, Rakesh Kumar3

  • 1Department of Physics, Indian Institute of Technology Ropar, SAB Building, IIT Ropar, Rupnagar, 140001, India.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|October 22, 2026
PubMed

Keywords:
Berry curvatureMoiré heterostructurevalletronicsvalley Chern numbervalley topological phase

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