High-Performance Near-Infrared Perovskite Single-Crystal Photodetectors Enabled by Multifunctional Additive Engineering for Image Encryption
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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Xin Zhao1, Xinren Zhang1, Xiaohan Lai1
1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, College of Integrated Circuits, International Center of Future Science, Jilin University, Changchun130012, China.
Abstract:
Iodide-based metal halide perovskite single crystals are promising candidates for near-infrared photodetection because of their favorable bandgaps and outstanding optoelectronic characteristics. However, iodide oxidation during crystallization deteriorates precursor stability, crystal quality, and device performance. Herein, potassium formate is introduced as a multifunctional additive that simultaneously suppresses iodide oxidation, passivates vacancy-related defects, and inhibits ion migration. As a result, the optimized crystal achieves an ultralow trap-state density of 5.23 × 108 cm-3, approaching the best values reported for perovskite single crystals. The corresponding photodetector shows a narrowband response centered at 800 nm, a specific detectivity of 1.14 × 1011 Jones, and a wide linear dynamic range of 146 dB. It also enables reliable image encryption with strong resistance to visible-light interference, a capability that is difficult to realize with conventional broadband photodetectors. These findings provide a practical route toward stable near-infrared photodetection for secure optical information processing.

