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Published on: August 2, 2019
Function-Switchable Superconducting-Spintronic Devices for Read-Protected Data Storage
Gen Li1, Xiaoguang Xu1, Kangkang Meng1
1Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing100083, China.
Abstract:
Superconductivity and charge-to-spin conversion are both desirable for low-dissipation information processing, but they usually operate in different material platforms. Here we show that the p-orbital alloy In2Bi combines type-II superconductivity below 5.6 K with efficient spin-current generation in the normal state. In Co/In2Bi devices, spin Hall magnetoresistance and second-harmonic Hall measurements give consistent spin Hall angles, confirming reliable charge-to-spin conversion. By integrating In2Bi with Fe3GaTe2, we realize a function-switchable superconducting-spintronic device with three resistance states. Magnetic information can be written by a magnetic field or spin-orbit torque and read through the anomalous Hall resistance signal in the normal state. In the superconducting state, the anomalous Hall resistance signal readout is suppressed, producing field-controlled read protection without additional circuit elements. This work establishes In2Bi as a dual-functional platform for superconductivity-gated spintronic readout and read-protected data storage.
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