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High-Pressure Synthesis of SrCu3Mn4O12: A Room-Temperature Ferrimagnetic Semiconductor with Spin-Polarized Electronic
Liyuan Jiang1, Zikai Liu1, Jiaxin Tian1
1Synergetic Extreme Condition High-Pressure Science Center, State Key Laboratory of High Pressure and Superhard Materials, and Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun130012, China.
Abstract:
A-site-ordered quadruple perovskites (AA'3B4O12) exhibit rich electronic and magnetic behaviors arising from the coexistence of multiple transition-metal sublattices. Here we report the high-pressure synthesis and comprehensive characterization of SrCu3Mn4O12, a previously unknown Sr-based member of the A2+Cu3Mn4O12 family. X-ray diffraction and Rietveld refinement confirm a fully ordered Im3̅ structure. Magnetic measurements reveal room-temperature ferrimagnetism with a Curie temperature of approximately 325 K, together with semiconducting transport behavior and a large negative magnetoresistance of -38% under 7 T at 2 K. First-principles calculations further reveal a spin-polarized semiconducting state, in which the valence-band maximum and conduction-band minimum originate from opposite spin states. These results expand the A2+Cu3Mn4O12 family and establish SrCu3Mn4O12 as a promising ferrimagnetic semiconductor for spintronic and magnetoresistive applications.
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