Related Experiment Video
Updated: Oct 25, 2026

Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
Published on: December 18, 2015
Highly Polarized Narrow Linewidth Near-Infrared Emission from InSe-Based Light-Emitting Diodes
Yu Zhang1, Tongxin Guo1, Tao Wang1
1State Key Laboratory of Bioinspired Interfacial Materials Science, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou215123, P. R. China.
Abstract:
Near-infrared (NIR) light-emitting diodes (LEDs) operating beyond 900 nm are critical for biomedical imaging and optical communications. However, achieving spectrally narrow emission with controlled polarization remains challenging. This work demonstrates electrically pumped NIR LEDs exploiting P-band emission in two-dimensional layered indium selenide (InSe). The P-band emission stems from exciton-exciton scattering, which is further enhanced by the formation of propagating exciton polaritons in the InSe crystal. Using a vertically stacked Au/InSe/Ag nanowire heterostructure, we achieved edge-localized P-band emission featuring narrow linewidth (Δλ < 20 nm), quadratic power dependence, and high linear polarization (∼80%). The P-band LED could operate continuously for more than 10 h with 96.3% intensity retention. Our approach establishes a new pathway for developing advanced on-chip NIR light sources, holding significant potential for applications in deep-tissue bioimaging and optical communication systems.
Related Concept Videos
IR Spectrum Peak Intensity: Dipole Moment
Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)
IR Absorption Frequency: Hybridization
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that stretch at a...
IR Spectrum Peak Intensity: Amount of IR-Active Bonds
IR Absorption Frequency: Delocalization
In IR spectroscopy,...

