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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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Published on: July 11, 2025

Switching Chern Number by Sliding and Gating in Alternately Twisted Tetralayer MoTe2

Xiao-Wei Zhang1, Kaijie Yang1, Xiaodong Xu1,2

  • 1Department of Materials Science and Engineering, University of Washington, Seattle, Washington98195, United States.

Nano Letters
|October 23, 2026
PubMed

Keywords:
Chern number switchingband topologygate tunabilityinterlayer slidingtetralayer moiré MoTe2

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