Related Experiment Video
Updated: Oct 27, 2026
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
High-sensitivity deep shortwave infrared organic photodetectors enabled by selenium-integrated quinoidal molecular
Wenkui Wei1, Bingyan Yin1, Yeye Wang1
1Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China.
Abstract:
Developing organic photodetectors (OPDs) that can detect in deep shortwave infrared (deep-SWIR) region (1.2-1.6 μm) is technologically important. Yet, the performance of the state-of-the-art deep-SWIR OPDs remains substantially limited. Herein, we report a selenium-integrated quinoidal small molecular acceptor, SeBz-4Cl, enabling highly sensitive deep-SWIR photodetection. Selenium incorporation enhances quinoidal character along the conjugated backbone of the molecules, thus expanding absorption approaching 1.5 μm. Moreover, SeBz-4Cl with strengthened intermolecular interactions led to an ideal film morphology, which reduced Urbach energy and favored charge dynamics. Under -1 V voltage bias, the SeBz-4Cl-based OPD achieved a low dark current density of 2.97 × 10-7 A cm-2 and an external quantum efficiency (EQE) of 7.8% at 1310 nm, together with a high specific detectivity (D*) exceeding 1011 Jones across 500-1400 nm, representing advanced deep-SWIR OPD performance. Furthermore, an optical communication system and a flexible imager under 1.2 μm illumination were demonstrated, highlighting potential of these deep-SWIR OPDs for information electronics and next generation optoelectronic applications in future.
