High-entropy enabled two-dimensional ferroelectricity and memristive synapses in van der Waals layered materials
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Updated: Oct 31, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Ning Sun1,2, Xu Han3, Weishen Li1
1State Key Laboratory of Information Photonics and Optical Communications, School of Physical Science and Technology, Beijing University of Posts and Telecommunications, Beijing, China.
Abstract:
Two-dimensional ferroelectric materials offer opportunities for ultrathin non-volatile electronics, but their development is limited by stringent structural requirements for intrinsic polarity. Here we show that high-entropy engineering can induce switchable polarization in centrosymmetric van der Waals materials. By introducing configurational disorder into layered metal phosphorus trisulfides, we synthesize (MnFeCoNi)1-xCdxPS3 single crystals exhibiting electric-field-induced polar states and ferroelectric-like switching at ±0.5 V, with a transition temperature up to 523 K. Combined calculations and characterizations reveal that polarization originates from electric-field-driven Cd2+ migration enabled by lattice distortions and heterogeneous coordination environments. This migration-mediated mechanism differs from conventional ferroelectric models and enables non-volatile neuromorphic functions, including long-term potentiation and bidirectional weight modulation. This work establishes high-entropy engineering as a strategy for manipulating ion migration dynamics in two-dimensional layered materials, opening a pathway toward emergent ferroelectric-like states beyond the conventional requirement of non-centrosymmetric structures.
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