Hybrid Nanocomposite for Resistive Switching Memory

The need for neuromorphic computing is growing, and flexible electronics has spurred the search for alternative memory technologies independent of classical von Neumann architectures. The role of hybrid organic-inorganic nanocomposites is significant in the implementation of resistive switching memory, as their electrical properties depend on the preparation process. Renowned in this work is the fabrication and investigation of the electrical properties of the two-terminal indium-tin oxide (ITO)/polyaniline (PANI):zinc oxide (ZnO)/aluminum (Al) memory device based on a single-layer device prepared by the spin-coating method. Morphology, analyzed using field-emission scanning electron microscopy and transmission electron microscopy, reveals granular and dense structures of ZnO nanoparticles (mean size of 50 ± 10 nm) within the PANI matrix. In terms of electrical investigation, the device exhibits significant asymmetric, nonlinear, and hysteretic current-voltage characteristics, with a high-resistance state (HRS) of ≈ 60 MΩ and a low-resistance state (LRS) of ≈ 65 kω. Furthermore, the device has an ON/OFF current ratio of about 10³ at 0.2 V reading voltage. Retention tests conducted at a reading voltage of 0.2 V for times beyond 10³ s indicate stable memory states with no substantial changes in resistance. The reason for such behavior is believed to be charge trapping and de-trapping at PANI-ZnO interfaces, as well as conduction through oxygen vacancies, which distinguishes this device from final electrochemical metallization memories. The distinctive characteristics of a retention time exceeding 10³ s, low operating voltage, stable ON/OFF state, and ease of device fabrication suggest that the PANI:ZnO nanocomposite is a promising candidate for non-volatile memory.