Electronic trap formation and broadband electromagnetic absorption in two-dimensional Janus MoSSe structures

Improvements in the performance of electromagnetic wave-absorbing materials have long relied on component optimization and structural design, while the control of electromagnetic wave absorption based on electronic dynamics remains challenging. This study proposes a Schottky barrier-gated electronic trap dynamics strategy to achieve interface electronic state control by fabricating a Janus MoSSe/Cu/Ni heterostructure. By combining DFT calculations with experimental analysis, it was found that nickel doping increases the work function at the heterojunction interface and enhances the Schottky barrier, causing electrons at the interface to transition from free migration to barrier-confined localized states, thereby forming tunable electron traps. This electronic localization induces a synergistic enhancement of space charge polarization, Maxwell-Wagner interface polarization, and Janus dipole polarization, resulting in highly efficient electromagnetic energy dissipation. The MSSCCN-2 constructed based on this strategy, achieved an effective absorption bandwidth of 6.69 GHz at 1.75 mm, providing 100% coverage of the Ku-band. Electromagnetic simulations further revealed the role of interfacial electronic modulation in promoting localized electric field enhancement and energy dissipation. This study established a structure-property relationship among Schottky barrier engineering, electronic localization behavior, and electromagnetic dissipation, providing a new approach for designing broadband electromagnetic functional materials based on the engineering of interfacial electronic states.