[P-type silicon surface barrier detector used for X-ray dosimetry]

Area of Science:

• Radiation detection and measurement
• Semiconductor device physics
• Nuclear instrumentation

Background:

• Surface barrier detectors are crucial for radiation detection.
• Understanding temperature dependence is key for accurate dosimetry.
• P-type and N-type detectors exhibit different response characteristics.

Purpose of the Study:

• To assess the suitability of P-type surface barrier detectors for X-ray dosimetry.
• To investigate the influence of temperature on detector performance.
• To compare P-type and N-type detector responses.

Main Methods:

• Fabrication of P-type and N-type surface barrier detectors.
• Testing detector response to X-rays at varying dose rates and temperatures.
• Measuring short-circuit current and open-circuit voltage.

Main Results:

• Both detector types showed linear short-circuit current with dose rate at room temperature.
• N-type detector current remained stable up to 30°C, then decreased; voltage decreased linearly.
• P-type detector voltage and current decreased almost linearly with increasing temperature.

Conclusions:

• P-type surface barrier detectors demonstrate potential for X-ray dosimetry.
• Further improvements for P-type detectors are possible.
• Temperature significantly affects detector performance, requiring consideration in applications.