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In-situ HVEM study of dopant dependent (113)-defect generation in silicon during 1-MeV electron irradiation
A Romano-Rodriguez1, J Vanhellemont
1LCMM, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Spain.
Microscopy Research and Technique
|June 1, 1993
Abstract
No abstract available in PubMed .
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