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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

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Target geometry dependence of electron energy loss spectra in scanning transmission electron microscopy (STEM)

A Rivacoba1, J Aizpurua, N Zabala

  • 1Departamento de Fisica de Materiales, Facultad de Quimica, Universidad del Pais Vasco/Euskal Herriko Unibertsitatea, San Sebastian, Spain. waprioca@sq.ehu.es

Scanning Microscopy
|January 1, 1995
PubMed

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