XTEM sample preparation technique for n-type compound semiconductors using photochemical etching
Related Experiment Video
Updated: Nov 3, 2026

11:14
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Microscopy Research and Technique
|November 1, 1996
Abstract:
A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsP/InP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.

