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Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
1S. Mathews, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA. R. Ramesh, Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. T. Venkatesan, Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. J. Benedetto, Army Research Laboratory, Adelphi, MD 20783-1197, USA.
Ferroelectric field effect devices utilizing doped rare-earth manganates demonstrate tunable semiconductor properties for nonvolatile memory. This research showcases a device with significant conductance modulation and minimal data loss.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Engineering
Background:
- Ferroelectric field effect devices are promising for nonvolatile active memory applications.
- Rare-earth manganates, known for colossal magnetoresistance, are explored as semiconductor channel materials.
Purpose of the Study:
- To investigate the use of doped rare-earth manganates in epitaxial field effect devices for memory applications.
- To demonstrate the tunability of carrier concentration in manganate-based semiconductor channels.
Main Methods:
- Fabrication of a prototypical epitaxial field effect device using La0.7Ca0.3MnO3 as the semiconductor channel.
- Integration of PbZr0.2Ti0.8O3 as the ferroelectric gate material.
- Tuning of carrier concentration by varying manganate stoichiometry.
Main Results:
- Achieved a modulation in channel conductance of at least a factor of 3.
- Observed a retention loss of only 3 percent after 45 minutes of unpowered operation.
- Demonstrated effective control over semiconductor channel properties via ferroelectric gating.
Conclusions:
- Doped rare-earth manganates are viable semiconductor materials for ferroelectric field effect memory devices.
- The demonstrated device exhibits promising performance for nonvolatile memory applications.
- Stoichiometry control offers a method to tune device characteristics.
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