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Enhanced intergrain tunneling magnetoresistance in half-metallic CrO2 films
1H. Y. Hwang, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA. S.-W. Cheong, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08855, USA.
Abstract:
Low-field tunneling magnetoresistance was observed in films of half-metallic CrO2 that were grown by high-pressure thermal decomposition of CrO3. High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO2 into insulating Cr2O3, which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.