Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Defects in semiconductors: some fatal, some vital

Queisser1, Haller

  • 1Department of Materials Science and Mineral Engineering, University of California and Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

Science (New York, N.Y.)
|August 14, 1998
PubMed
Summary

Semiconductor defects, once problematic, are now key to controlling material properties through impurity doping. Understanding native and metastable defects drives innovation in semiconductor technology.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[Kikuchi-Fujimoto disease mimicking thyroid metastasis].

Revue de stomatologie et de chirurgie maxillo-faciale·2005
Same author

Comment on "Self-diffusion in silicon: similarity between the properties of native point defects"

Physical review letters·2000
Same author

Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

Physical review letters·2000
Same author

Four-component intergrowth structures of the metal-ion cage complexes fac-(1,5,9,13,20-pentamethyl-3,7,11,15,18,22-hexaazabicyclo

Acta crystallographica. Section B, Structural science·2000
Same author

Polyphasic classification of 0.2 microm filterable bacteria from the western Mediterranean Sea

Systematic and applied microbiology·2000
Same author

Papillary Squamous Cell Carcinoma.

Cancer control : journal of the Moffitt Cancer Center·2000

Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Physics

Background:

  • Early semiconductor research faced challenges due to extreme sensitivity to impurities, leading to irreproducible properties.
  • The historical view of semiconductors as inherently unstable materials has been overcome.
  • Impurity doping has evolved into a precise technology for controlling semiconductor characteristics.

Purpose of the Study:

  • To review the critical role of defects in semiconductor materials.
  • To highlight the evolution from impurity sensitivity to controlled doping technology.
  • To discuss the impact of native, extended, and metastable defects on semiconductor properties and processes.

Main Methods:

  • Review of historical experimental data and scientific literature.
  • Analysis of impurity doping techniques and their impact.
  • Examination of theoretical and experimental studies on native defects (vacancies, interstitials) and extended defects (dislocations).

Main Results:

  • Defects, particularly impurities, are now understood as essential for controlling electrical conductivity, composition, and carrier lifetimes.
  • Native defects like vacancies and self-interstitials are crucial for diffusion processes.
  • Understanding defect reactions enables gettering and passivation of impurities.
  • Metastable defects and isotopic control offer new research avenues.

Conclusions:

  • Defects are fundamental to semiconductor behavior and technological applications.
  • Continued research into defect properties and interactions is vital for advancing semiconductor science.
  • Isotopically controlled semiconductors represent a frontier for defect research.

Related Experiment Videos