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Metallic CsI at pressures of up to 220 gigapascals
1M. I. Eremets and T. C. Kobayashi, Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan. K. Shimizu, Department of Physical Science, Graduate School of Engineering Science, Osaka.
Abstract:
Direct electrical transport measurements in a diamond anvil cell provide evidence for the metallization of cesium iodide (CsI) at a pressure of 115 gigapascals. A drop in the temperature dependence of the resistance was found at pressures above 180 gigapascals, indicating that the CsI was superconductive. The superconductivity changed under the influence of a magnetic field to a lower critical temperature and disappeared above 0.3 tesla. The highest critical temperature at which superconductivity was observed was 2 kelvin, and the critical temperature decreased with increasing pressure.