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Updated: Oct 25, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Epitaxial growth and band bending of n- and p-type Ge on GaAs(001)

Chambers, Irwin

    Physical Review. B, Condensed Matter
    |October 15, 1988
    PubMed
    Abstract

    No abstract available in PubMed .

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