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Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces

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Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces...

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Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces