Characterization of the 1117-meV and 1052-meV optical transitions in heat-treated Si

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Jeyanathan, Davies, Lightowlers

    Physical Review. B, Condensed Matter
    |October 15, 1995
    PubMed
    Abstract

    No abstract available in PubMed .

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