Related Experiment Video

Updated: Jul 28, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
14:11

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

Published on: March 29, 2016

High-field electron-drift measurements and the mobility edge in hydrogenated amorphous silicon

Gu, Schiff, Chévrier

    Physical Review. B, Condensed Matter
    |August 15, 1995
    PubMed
    Abstract

    No abstract available in PubMed .

    More Related Videos

    Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics13:58

    Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

    Published on: September 28, 2016

    All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics11:33

    All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

    Published on: January 19, 2018

    Related Concept Videos

    The Hall Effect01:30

    The Hall Effect

    Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
    Carrier Transport01:21

    Carrier Transport

    The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
    Drift Current:
    The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by: