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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates

Lee, Cahill, Greene

    Physical Review. B, Condensed Matter
    |March 15, 1996
    PubMed
    Abstract

    No abstract available in PubMed .

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