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Updated: Jul 29, 2026

07:50
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Observation of compensating Ga vacancies in highly Si-doped GaAs
Abstract
No abstract available in PubMed .
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This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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