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A M Bratkovsky

Showing results (1-10 of 11) with videos related to

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Physical Review Letters|May 1, 2001
Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin filmsA M Bratkovsky, A P Levanyuk
Physical Review Letters|July 20, 2001
Comment on: "intrinsic ferroelectric coercive field"A M Bratkovsky, A P Levanyuk
Physical Review Letters|January 15, 2011
Key pairing interaction in layered doped ionic insulatorsA S Alexandrov, A M Bratkovsky
Physical Review Letters|June 4, 2008
Comment on "elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions"A M Bratkovsky, A P Levanyuk
Physical Review Letters|September 20, 2011
Alexandrov and bratkovsky reply:A S Alexandrov, A M Bratkovsky
Physical Review Letters|April 20, 2004
High-frequency spin-valve effect in a ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spinsA M Bratkovsky, V V Osipov
Annals of the New York Academy of Sciences|April 25, 2002
Geometrical factors in conductance through molecular filmsP E Kornilovitch, A M Bratkovsky
Physical Review Letters|March 24, 2005
Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructuresA M Bratkovsky, A P Levanyuk
Physical Review Letters|April 12, 2006
Phase coexistence and resistivity near the ferromagnetic transition of manganitesA S Alexandrov, A M Bratkovsky, V V Kabanov
Nanotechnology|May 17, 2011
Molecular dynamics simulations of oxide memory resistors (memristors)S E Savel'ev, A S Alexandrov, A M Bratkovsky, et al.
Pageof 2

Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Physical Review Letters|May 1, 2001
Phase transitions, stability, and dielectric response of the domain structure in ferroelectric-ferroelastic thin filmsA M Bratkovsky, A P Levanyuk
Physical Review Letters|July 20, 2001
Comment on: "intrinsic ferroelectric coercive field"A M Bratkovsky, A P Levanyuk
Physical Review Letters|January 15, 2011
Key pairing interaction in layered doped ionic insulatorsA S Alexandrov, A M Bratkovsky
Physical Review Letters|June 4, 2008
Comment on "elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions"A M Bratkovsky, A P Levanyuk
Physical Review Letters|September 20, 2011
Alexandrov and bratkovsky reply:A S Alexandrov, A M Bratkovsky
Physical Review Letters|April 20, 2004
High-frequency spin-valve effect in a ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spinsA M Bratkovsky, V V Osipov
Annals of the New York Academy of Sciences|April 25, 2002
Geometrical factors in conductance through molecular filmsP E Kornilovitch, A M Bratkovsky
Physical Review Letters|March 24, 2005
Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructuresA M Bratkovsky, A P Levanyuk
Physical Review Letters|April 12, 2006
Phase coexistence and resistivity near the ferromagnetic transition of manganitesA S Alexandrov, A M Bratkovsky, V V Kabanov
Nanotechnology|May 17, 2011
Molecular dynamics simulations of oxide memory resistors (memristors)S E Savel'ev, A S Alexandrov, A M Bratkovsky, et al.
Pageof 2