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Nature Communications|September 5, 2019
Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h<sup>-1</sup> by hydride vapor phase epitaxyWondwosen Metaferia, Kevin L Schulte, John Simon, et al.
Nature Communications|July 28, 2019
Gallium arsenide solar cells grown at rates exceeding 300 µm h<sup>-1</sup> by hydride vapor phase epitaxyWondwosen Metaferia, Kevin L Schulte, John Simon, et al.
ACS Applied Materials & Interfaces|August 22, 2020
Patterning Metal Grids for GaAs Solar Cells with Cracked Film Lithography: Quantifying the Cost/Performance TradeoffChristopher P Muzzillo, Evan Wong, Lorelle M Mansfield, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 31, 2012
Room-temperature electron spin amplifier based on Ga(In)NAs alloysYuttapoom Puttisong, Irina A Buyanova, Aaron J Ptak, et al.
ACS Omega|July 25, 2022
Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs SystemBrelon J May, Jae Jin Kim, Patrick Walker, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|September 3, 2019
Carrier-Transport Study of Gallium Arsenide Hillock DefectsChuanxiao Xiao, Chun-Sheng Jiang, Jun Liu, et al.
ACS Omega|December 4, 2023
Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase EpitaxyDennice M Roberts, Hyunseok Kim, Elisabeth L McClure, et al.
Crystal Growth & Design|April 25, 2024
In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/DopantsWilliam E McMahon, Anna K Braun, Allison N Perna, et al.
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