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The Journal of Chemical Physics|June 24, 2020
Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESRA Stesmans, B Schoenaers, V V Afanas'evJournal of Physics. Condensed Matter : an Institute of Physics Journal|August 6, 2011
Electron spin resonance observation of an interfacial Ge P(b 1)-type defect in SiO(2)/(100)Si(1-x)Ge(x)/SiO(2)/Si heterostructuresA Stesmans, P Somers, V V Afanas'evJournal of Physics. Condensed Matter : an Institute of Physics Journal|January 13, 2017
The lead acceptor in p-type natural 2H-polytype MoS2 crystals evidenced by electron paramagnetic resonanceS Iacovo, A Stesmans, M Houssa, et al.Physical Chemistry Chemical Physics : PCCP|March 30, 2017
Intrinsic point defects in buckled and puckered arsenene: a first-principles studyK Iordanidou, J Kioseoglou, V V Afanas'ev, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 16, 2020
Band alignment at interfaces of two-dimensional materials: internal photoemission analysisValery V Afanas'ev, Gilles Delie, Michel Houssa, et al.Physical Chemistry Chemical Physics : PCCP|February 14, 2013
An electric field tunable energy band gap at silicene/(0001) ZnS interfacesM Houssa, B van den Broek, E Scalise, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|January 7, 2016
Impact of point defects on the electronic and transport properties of silicene nanoribbonsK Iordanidou, M Houssa, B van den Broek, et al.Nanotechnology|December 5, 2018
Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interfaceV V Afanas'ev, D Chiappe, M Perucchini, et al.Nanoscale Research Letters|April 23, 2017
Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo SulfurizationA Stesmans, S Iacovo, D Chiappe, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 11, 2011
Observation of a frequency-dependent doublet in the Si-B3 ESR spectrumK Keunen, A StesmansPageof 2,448