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Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|January 31, 2019
Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation MeasurementsAlain Portavoce, Khalid Hoummada, Lee ChowScientific Reports|October 3, 2023
Influence of the Mn<sub>5</sub>Ge<sub>3</sub>/Ge ohmic-contact interface on the Seebeck coefficient of the Mn<sub>5</sub>Ge<sub>3</sub>/Ge bilayerAlain Portavoce, Siham Hassak, Maxime BertoglioScientific Reports|January 4, 2023
Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin filmsAlain Portavoce, Elie Assaf, Maxime Bertoglio, et al.Beilstein Journal of Nanotechnology|January 1, 2015
Si/Ge intermixing during Ge Stranski-Krastanov growthAlain Portavoce, Khalid Hoummada, Antoine Ronda, et al.Scientific Reports|June 25, 2024
Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallizationJacopo Remondina, Alain Portavoce, Yannick Le Friec, et al.Nanomaterials (Basel, Switzerland)|August 12, 2022
Thickness Effect on the Solid-State Reaction of a Ni/GaAs SystemSelma Rabhi, Nouredine Oueldna, Carine Perrin-Pellegrino, et al.Beilstein Journal of Nanotechnology|March 31, 2015
Nanoporous Ge thin film production combining Ge sputtering and dopant implantationJacques Perrin Toinin, Alain Portavoce, Khalid Hoummada, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|August 28, 2025
Startling C Behavior in Mo-Free Steel Atom Probe Tomography VolumesWilliam Mottay, Jeremy Landes, Alain Portavoce, et al.Pageof 1