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Nanotechnology|August 13, 2016
Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopyAlbert Minj, Ana Cros, Thomas Auzelle, et al.
Nanotechnology|March 14, 2013
Strain distribution and defect analysis in III-nitrides by dynamical AFM analysisAlbert Minj, Daniela Cavalcoli, Anna Cavallini, et al.
Physical Review Letters|July 9, 2020
Photoinduced Persistent Electron Accumulation and Depletion in LaAlO_{3}/SrTiO_{3} Quantum WellsYu Chen, Yoann Lechaux, Blai Casals, et al.
ACS Applied Materials & Interfaces|February 5, 2026
Detection and Modulation of Gap States at the Grain Boundaries of Monolayer WS<sub>2</sub>Fateme Yekefalah, Albert Minj, Ankit Nalin Mehta, et al.
Small Methods|February 11, 2026
Carrier Mapping in Sub-2nm Node Nanosheet Transistors with Scanning Spreading Resistance MicroscopyAndrea Pondini, Pierre Eyben, Lennaert Wouters, et al.
Nanotechnology|March 24, 2024
Probe chip nanofabrication enabled reverse tip sample scanning probe microscopy concept and measurementsHyeon-Su Kim, Nemanja Peric, Albert Minj, et al.
Nanotechnology|January 29, 2026
Local characterization and current-voltage modelling of conductive threading dislocations in AlGaN/GaN heterostructures grown on Si(111) and engineered poly-AlN substratesAlbert Minj, Andrea Pondini, Han Han, et al.
ACS Nano|April 1, 2024
Direct Assessment of Defective Regions in Monolayer MoS<sub>2</sub> Field-Effect Transistors through <i>In Situ</i> Scanning Probe Microscopy MeasurementsAlbert Minj, Vivek Mootheri, Sreetama Banerjee, et al.
Scientific Reports|September 23, 2023
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processingWalter Gonçalez Filho, Matteo Borga, Karen Geens, et al.
ACS Nano|May 27, 2021
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance NanoelectronicsYuanyuan Shi, Benjamin Groven, Jill Serron, et al.
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