Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Alessandro Chini

Showing results (1-10 of 4) with videos related to

Pageof 1
Sort By:
Micromachines|December 23, 2022
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G ApplicationsNicolò Zagni, Giovanni Verzellesi, Alessandro Chini
Sensors (Basel, Switzerland)|June 27, 2025
Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature EstimationClaudio Bianchini, Mattia Vogni, Alessandro Chini, et al.
Micromachines|July 2, 2021
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTsNicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, et al.
Micromachines|August 28, 2025
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTsGiovanni Giorgino, Cristina Miccoli, Marcello Cioni, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Micromachines|December 23, 2022
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G ApplicationsNicolò Zagni, Giovanni Verzellesi, Alessandro Chini
Sensors (Basel, Switzerland)|June 27, 2025
Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature EstimationClaudio Bianchini, Mattia Vogni, Alessandro Chini, et al.
Micromachines|July 2, 2021
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTsNicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, et al.
Micromachines|August 28, 2025
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTsGiovanni Giorgino, Cristina Miccoli, Marcello Cioni, et al.
Pageof 1