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Crystal Growth & Design|July 10, 2023
From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPENicholas Morgan, Vladimir G Dubrovskii, Ann-Kristin Stief, et al.Nanoscale Horizons|February 14, 2024
Control of Ge island coalescence for the formation of nanowires on siliconSanthanu Panikar Ramanandan, Joel Reñé Sapera, Alban Morelle, et al.Pageof 2