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ACS Nano
|
November 29, 2018
Electrochemical Polishing of Two-Dimensional Materials
Amritanand Sebastian, Fu Zhang, Akhil Dodda, et al.
ACS Applied Materials & Interfaces
|
October 14, 2017
Anomalous Corrosion of Bulk Transition Metal Diselenides Leading to Stable Monolayers
Yu-Ting Huang, Akhil Dodda, Daniel S Schulman, et al.
ACS Nano
|
January 15, 2021
Wafer-Scale Epitaxial Growth of Unidirectional WS<sub>2</sub> Monolayers on Sapphire
Mikhail Chubarov, Tanushree H Choudhury, Danielle Reifsnyder Hickey, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
December 21, 2020
Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor
Fu Zhang, Boyang Zheng, Amritanand Sebastian, et al.
ACS Nanoscience Au
|
December 27, 2022
Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices
Yu Lei, Tianyi Zhang, Yu-Chuan Lin, et al.
Page
of 2
Search research articles
Search
Showing results (11-20 of 15) with videos related to
Sort By:
Page
of 2
You have reached the last page of results.
This site can display upto 15 results.
ACS Nano
|
November 29, 2018
Electrochemical Polishing of Two-Dimensional Materials
Amritanand Sebastian, Fu Zhang, Akhil Dodda, et al.
ACS Applied Materials & Interfaces
|
October 14, 2017
Anomalous Corrosion of Bulk Transition Metal Diselenides Leading to Stable Monolayers
Yu-Ting Huang, Akhil Dodda, Daniel S Schulman, et al.
ACS Nano
|
January 15, 2021
Wafer-Scale Epitaxial Growth of Unidirectional WS<sub>2</sub> Monolayers on Sapphire
Mikhail Chubarov, Tanushree H Choudhury, Danielle Reifsnyder Hickey, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
December 21, 2020
Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor
Fu Zhang, Boyang Zheng, Amritanand Sebastian, et al.
ACS Nanoscience Au
|
December 27, 2022
Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices
Yu Lei, Tianyi Zhang, Yu-Chuan Lin, et al.
Page
of 2