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Scientific Reports|November 18, 2020
High-temperature etching of SiC in SF6/O2 inductively coupled plasmaArtem A Osipov, Gleb A Iankevich, Anastasia B Speshilova, et al.
Scientific Reports|March 29, 2022
OES diagnostics as a universal technique to control the Si etching structures profile in ICPArtem A Osipov, Gleb A Iankevich, Anastasia B Speshilova, et al.
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