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Andre Wachowiak

Showing results (1-10 of 4) with videos related to

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Materials (Basel, Switzerland)|February 15, 2022
Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based DevicesAnthony Calzolaro, Thomas Mikolajick, Andre Wachowiak
ACS Applied Materials & Interfaces|May 2, 2025
ZrO<sub>2</sub> Based Multilayered Stacks with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub> or La<sub>2</sub>O<sub>3</sub> Interlayers for SiC Power DevicesSandra Krause, Aleksey Mikhaylov, Uwe Schroeder, et al.
Ultramicroscopy|June 17, 2018
SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devicesStefan Doering, Andre Wachowiak, Hagen Roetz, et al.
Nature Materials|January 15, 2008
Tuning fulleride electronic structure and molecular ordering via variable layer indexYayu Wang, Ryan Yamachika, Andre Wachowiak, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Materials (Basel, Switzerland)|February 15, 2022
Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based DevicesAnthony Calzolaro, Thomas Mikolajick, Andre Wachowiak
ACS Applied Materials & Interfaces|May 2, 2025
ZrO<sub>2</sub> Based Multilayered Stacks with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub> or La<sub>2</sub>O<sub>3</sub> Interlayers for SiC Power DevicesSandra Krause, Aleksey Mikhaylov, Uwe Schroeder, et al.
Ultramicroscopy|June 17, 2018
SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devicesStefan Doering, Andre Wachowiak, Hagen Roetz, et al.
Nature Materials|January 15, 2008
Tuning fulleride electronic structure and molecular ordering via variable layer indexYayu Wang, Ryan Yamachika, Andre Wachowiak, et al.
Pageof 1