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Nanoscale Research Letters|February 10, 2012
Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxyAnton Davydok, Steffen Breuer, Andreas Biermanns, et al.Nano Letters|November 18, 2014
Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111)Andreas Biermanns, Emmanouil Dimakis, Anton Davydok, et al.Journal of Synchrotron Radiation|October 22, 2009
Individual GaAs nanorods imaged by coherent X-ray diffractionAndreas Biermanns, Anton Davydok, Hendrik Paetzelt, et al.Journal of Applied Crystallography|September 19, 2013
Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]BAnton Davydok, Torsten Rieger, Andreas Biermanns, et al.Journal of Applied Crystallography|September 19, 2013
Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beamsGenziana Bussone, Rüdiger Schott, Andreas Biermanns, et al.Nano Letters|January 30, 2015
Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substratesGenziana Bussone, Heiko Schäfer-Eberwein, Emmanouil Dimakis, et al.Physical Review Letters|February 21, 2015
Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffractionPhilipp Schroth, Martin Köhl, Jean-Wolfgang Hornung, et al.Pageof 1