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ACS Applied Materials & Interfaces|July 19, 2022
High-Density Patterning of InGaZnO by CH<sub>4</sub>: a Comparative Study of RIE and Pulsed Plasma ALEShreya Kundu, Stefan Decoster, Philippe Bezard, et al.
ACS Applied Materials & Interfaces|February 5, 2026
Detection and Modulation of Gap States at the Grain Boundaries of Monolayer WS<sub>2</sub>Fateme Yekefalah, Albert Minj, Ankit Nalin Mehta, et al.
Nanotechnology|July 15, 2020
Unravelling stacking order in epitaxial bilayer MX<sub>2</sub> using 4D-STEM with unsupervised learningAnkit Nalin Mehta, Nicolas Gauquelin, Magnus Nord, et al.
Nanotechnology|March 29, 2019
Effects of buried grain boundaries in multilayer MoS<sub>2</sub>Jonathan Ludwig, Ankit Nalin Mehta, Marco Mascaro, et al.
Nanotechnology|December 10, 2019
Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenidesJiongjiong Mo, Salim El Kazzi, Wouter Mortelmans, et al.
ACS Applied Materials & Interfaces|May 26, 2020
On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal DichalcogenidesWouter Mortelmans, Ankit Nalin Mehta, Yashwanth Balaji, et al.
ACS Nano|January 18, 2024
Chemical Vapor Deposition of a Single-Crystalline MoS<sub>2</sub> Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire SurfaceIryna Kandybka, Benjamin Groven, Henry Medina Silva, et al.
Nanotechnology|August 20, 2019
Peculiar alignment and strain of 2D WSe<sub>2</sub> grown by van der Waals epitaxy on reconstructed sapphire surfacesWouter Mortelmans, Salim El Kazzi, Ankit Nalin Mehta, et al.
ACS Nano|April 1, 2024
Direct Assessment of Defective Regions in Monolayer MoS<sub>2</sub> Field-Effect Transistors through <i>In Situ</i> Scanning Probe Microscopy MeasurementsAlbert Minj, Vivek Mootheri, Sreetama Banerjee, et al.
ACS Nano|May 27, 2021
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance NanoelectronicsYuanyuan Shi, Benjamin Groven, Jill Serron, et al.
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