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Optics Letters|February 12, 2021
Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switchesRuijia Liu, Annan Shang, Chang-Jiang Chen, et al.
Optics Letters|February 15, 2023
Electro-optic fs pulsed laser deflection in KTN crystals using UV illuminationAnnan Shang, Ruijia Liu, Yun Goo Lee, et al.
Optics Letters|July 7, 2020
Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity: publisher's noteChang-Jiang Chen, Ju-Hung Chao, Yun Goo Lee, et al.
Optics Letters|November 16, 2019
Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivityChang-Jiang Chen, Ju-Hung Chao, Yun Goo Lee, et al.
Optics Letters|August 15, 2018
Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switchJu-Hung Chao, Wenbin Zhu, Chang-Jiang Chen, et al.
Optics Letters|October 1, 2020
Anomalous bi-directional scanning electro-optic KTN devices with UV-assisted electron and hole injectionsChang-Jiang Chen, Annan Shang, Yun Goo Lee, et al.
Optics Express|October 29, 2020
Analysis on the electric field distribution in a relaxor ferroelectric KTN crystal near field-induced phase transition using optical deflection measurementsChang-Jiang Chen, Ju-Hung Chao, Yun Goo Lee, et al.
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