Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Arne Renz

Showing results (1-10 of 3) with videos related to

Pageof 1
Sort By:
Journal of Microscopy|June 29, 2026
In operando imaging of the space-charge region in a 4H-SiC MOSCAP using STEM-EBICEoin Moynihan, Arne Renz, Akif Yildirim, et al.
Materials (Basel, Switzerland)|April 13, 2024
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon SubstrateGerard Colston, Kelly Turner, Arne Renz, et al.
Materials (Basel, Switzerland)|May 13, 2026
Improving 3C-SiC Quality Through Wafer-Bonded Switchback EpitaxyGerard Colston, Kushani H Perera, Arne Renz, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Journal of Microscopy|June 29, 2026
In operando imaging of the space-charge region in a 4H-SiC MOSCAP using STEM-EBICEoin Moynihan, Arne Renz, Akif Yildirim, et al.
Materials (Basel, Switzerland)|April 13, 2024
Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon SubstrateGerard Colston, Kelly Turner, Arne Renz, et al.
Materials (Basel, Switzerland)|May 13, 2026
Improving 3C-SiC Quality Through Wafer-Bonded Switchback EpitaxyGerard Colston, Kushani H Perera, Arne Renz, et al.
Pageof 1