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Attilio Belmonte

Showing results (1-10 of 8) with videos related to

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The Journal of Physical Chemistry Letters|August 12, 2015
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging DevicesUmberto Celano, Ludovic Goux, Attilio Belmonte, et al.
Nanoscale|October 2, 2013
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devicesUmberto Celano, Ludovic Goux, Karl Opsomer, et al.
Faraday Discussions|October 23, 2018
Key material parameters driving CBRAM device performancesLudovic Goux, Janaki Radhakrishnan, Attilio Belmonte, et al.
Nano Letters|April 12, 2014
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devicesUmberto Celano, Ludovic Goux, Attilio Belmonte, et al.
ACS Applied Materials & Interfaces|July 26, 2024
Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line CompatibilityDae Seon Kwon, Jasper Bizindavyi, Gourab De, et al.
ACS Applied Materials & Interfaces|July 6, 2013
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cellsWouter Devulder, Karl Opsomer, Felix Seidel, et al.
Micromachines|September 28, 2021
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash MemoriesSivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, et al.
Scientific Reports|November 13, 2022
Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppressionDonguk Kim, Je-Hyuk Kim, Woo Sik Choi, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
The Journal of Physical Chemistry Letters|August 12, 2015
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging DevicesUmberto Celano, Ludovic Goux, Attilio Belmonte, et al.
Nanoscale|October 2, 2013
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devicesUmberto Celano, Ludovic Goux, Karl Opsomer, et al.
Faraday Discussions|October 23, 2018
Key material parameters driving CBRAM device performancesLudovic Goux, Janaki Radhakrishnan, Attilio Belmonte, et al.
Nano Letters|April 12, 2014
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devicesUmberto Celano, Ludovic Goux, Attilio Belmonte, et al.
ACS Applied Materials & Interfaces|July 26, 2024
Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line CompatibilityDae Seon Kwon, Jasper Bizindavyi, Gourab De, et al.
ACS Applied Materials & Interfaces|July 6, 2013
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cellsWouter Devulder, Karl Opsomer, Felix Seidel, et al.
Micromachines|September 28, 2021
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash MemoriesSivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, et al.
Scientific Reports|November 13, 2022
Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppressionDonguk Kim, Je-Hyuk Kim, Woo Sik Choi, et al.
Pageof 1