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Bai-Qian Wang

Showing results (1-10 of 7) with videos related to

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Science Bulletin|September 22, 2023
In-memory computing based on photonic-electronic hybrid phase-change cellsBai-Qian Wang, Xian-Bin Li, Hong-Bo Sun
Nanotechnology|January 27, 2023
Resistive switching mechanism of MoS<sub>2</sub>based atomristorXiao-Dong Li, Bai-Qian Wang, Nian-Ke Chen, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 14, 2024
Ultrafast structural transition and electron-phonon/phonon-phonon coupling in antimony revealed by nonadiabatic molecular dynamicsMeng Niu, Shun-Yao Qin, Bai-Qian Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2024
Resistive Memory Devices at the Thinnest Limit: Progress and ChallengesXiao-Dong Li, Nian-Ke Chen, Bai-Qian Wang, et al.
Nanomaterials (Basel, Switzerland)|February 13, 2025
Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power MemoryRui Wu, Nian-Ke Chen, Ming-Yu Ma, et al.
Nano Letters|August 7, 2025
Ultrafast Modulation of Stacking Orders in vdW Layers by Photoinduced Pseudosliding of Ferroelectric MonolayerMeng Niu, Nian-Ke Chen, Bai-Qian Wang, et al.
The Journal of Physical Chemistry Letters|February 13, 2026
Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory ApplicationsHuan-Ran Ding, Tian-Yu Zhao, Nian-Ke Chen, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Science Bulletin|September 22, 2023
In-memory computing based on photonic-electronic hybrid phase-change cellsBai-Qian Wang, Xian-Bin Li, Hong-Bo Sun
Nanotechnology|January 27, 2023
Resistive switching mechanism of MoS<sub>2</sub>based atomristorXiao-Dong Li, Bai-Qian Wang, Nian-Ke Chen, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 14, 2024
Ultrafast structural transition and electron-phonon/phonon-phonon coupling in antimony revealed by nonadiabatic molecular dynamicsMeng Niu, Shun-Yao Qin, Bai-Qian Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2024
Resistive Memory Devices at the Thinnest Limit: Progress and ChallengesXiao-Dong Li, Nian-Ke Chen, Bai-Qian Wang, et al.
Nanomaterials (Basel, Switzerland)|February 13, 2025
Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power MemoryRui Wu, Nian-Ke Chen, Ming-Yu Ma, et al.
Nano Letters|August 7, 2025
Ultrafast Modulation of Stacking Orders in vdW Layers by Photoinduced Pseudosliding of Ferroelectric MonolayerMeng Niu, Nian-Ke Chen, Bai-Qian Wang, et al.
The Journal of Physical Chemistry Letters|February 13, 2026
Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory ApplicationsHuan-Ran Ding, Tian-Yu Zhao, Nian-Ke Chen, et al.
Pageof 1