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Baraff

Showing results (1-10 of 195) with videos related to

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Physical Review. B, Condensed Matter|May 15, 1990
Stress splitting of the EL2 zero-phonon line: Need for reinterpretation of the main optical transitionBaraff
Physical Review. B, Condensed Matter|July 15, 1989
Stress splitting of the zero-phonon line of the (AsGa-Asi) defect pair in GaAs: Significance for the identity of EL2Baraff
Physical Review Letters|May 1, 1989
Stress splitting of the A1-->T2 transition of AsGa: Implied absence of Asi in the structure of EL2Baraff
Physical Review Letters|November 18, 1985
Bistability and metastability of the gallium vacancy in GaAs: The actuator of EL2?Baraff, Schluter
Physical Review. B, Condensed Matter|May 15, 1986
Binding and formation energies of native defect pairs in GaAsBaraff, Schlüter
Physical Review. B, Condensed Matter|April 15, 1987
Need for an acceptor level in the AsGa-Asi model for EL2Baraff, Schluter
Annals of Emergency Medicine|July 1, 1989
'Routine' laboratory tests: how many and when?L Baraff
Physical Review Letters|March 17, 1986
Baraff and Schluter respondBaraff, Schluter
Physical Review. B, Condensed Matter|August 15, 1992
Erratum: Electronic aspects of the optical-absorption spectrum of the EL2 defect in GaAsBaraff, Schluter
Physical Review. B, Condensed Matter|April 15, 1987
Electronic structure and binding energy of the AsGa-Asi pair in GaAs: EL2 and the mobility of interstitial arsenicBaraff, Schluter
Pageof 20

Showing results (1-10 of 195) with videos related to

Sort By:
Pageof 20
Physical Review. B, Condensed Matter|May 15, 1990
Stress splitting of the EL2 zero-phonon line: Need for reinterpretation of the main optical transitionBaraff
Physical Review. B, Condensed Matter|July 15, 1989
Stress splitting of the zero-phonon line of the (AsGa-Asi) defect pair in GaAs: Significance for the identity of EL2Baraff
Physical Review Letters|May 1, 1989
Stress splitting of the A1-->T2 transition of AsGa: Implied absence of Asi in the structure of EL2Baraff
Physical Review Letters|November 18, 1985
Bistability and metastability of the gallium vacancy in GaAs: The actuator of EL2?Baraff, Schluter
Physical Review. B, Condensed Matter|May 15, 1986
Binding and formation energies of native defect pairs in GaAsBaraff, Schlüter
Physical Review. B, Condensed Matter|April 15, 1987
Need for an acceptor level in the AsGa-Asi model for EL2Baraff, Schluter
Annals of Emergency Medicine|July 1, 1989
'Routine' laboratory tests: how many and when?L Baraff
Physical Review Letters|March 17, 1986
Baraff and Schluter respondBaraff, Schluter
Physical Review. B, Condensed Matter|August 15, 1992
Erratum: Electronic aspects of the optical-absorption spectrum of the EL2 defect in GaAsBaraff, Schluter
Physical Review. B, Condensed Matter|April 15, 1987
Electronic structure and binding energy of the AsGa-Asi pair in GaAs: EL2 and the mobility of interstitial arsenicBaraff, Schluter
Pageof 20