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Nano Letters
|
June 13, 2012
Engineering independent electrostatic control of atomic-scale (∼4 nm) silicon double quantum dots
Bent Weber, Suddhasatta Mahapatra, Thomas F Watson, et al.
Nano Letters
|
August 16, 2016
Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon
Saquib Shamim, Bent Weber, Daniel W Thompson, et al.
Nano Letters
|
June 26, 2023
Spin-Valley Locking for In-Gap Quantum Dots in a MoS<sub>2</sub> Transistor
Radha Krishnan, Sangram Biswas, Yu-Ling Hsueh, et al.
Physical Review Letters
|
December 27, 2014
Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires
Bent Weber, Hoon Ryu, Y-H Matthias Tan, et al.
Nano Letters
|
March 26, 2014
Transport in asymmetrically coupled donor-based silicon triple quantum dots
Thomas F Watson, Bent Weber, Jill A Miwa, et al.
Science Advances
|
November 22, 2017
Atomically engineered electron spin lifetimes of 30 s in silicon
Thomas F Watson, Bent Weber, Yu-Ling Hsueh, et al.
Nanoscale
|
July 31, 2013
Atomistic modeling of metallic nanowires in silicon
Hoon Ryu, Sunhee Lee, Bent Weber, et al.
Psychiatric Services (Washington, D.C.)
|
July 29, 2021
Creation of a Longitudinal Legal Data Set to Support Legal Epidemiology Studies of Mental Health Insurance Legislation
Megan D Douglas, Samantha Bent Weber, Claire Bass, et al.
Nanotechnology
|
February 5, 2024
Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure
Michael S Lodge, Elizabeth Marcellina, Ziming Zhu, et al.
Nanoscale
|
August 6, 2016
Reductive exfoliation of substoichiometric MoS2 bilayers using hydrazine salts
Torben Daeneke, Rhiannon M Clark, Benjamin J Carey, et al.
Page
of 4
Search research articles
Search
Showing results (11-20 of 36) with videos related to
Sort By:
Page
of 4
Nano Letters
|
June 13, 2012
Engineering independent electrostatic control of atomic-scale (∼4 nm) silicon double quantum dots
Bent Weber, Suddhasatta Mahapatra, Thomas F Watson, et al.
Nano Letters
|
August 16, 2016
Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon
Saquib Shamim, Bent Weber, Daniel W Thompson, et al.
Nano Letters
|
June 26, 2023
Spin-Valley Locking for In-Gap Quantum Dots in a MoS<sub>2</sub> Transistor
Radha Krishnan, Sangram Biswas, Yu-Ling Hsueh, et al.
Physical Review Letters
|
December 27, 2014
Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires
Bent Weber, Hoon Ryu, Y-H Matthias Tan, et al.
Nano Letters
|
March 26, 2014
Transport in asymmetrically coupled donor-based silicon triple quantum dots
Thomas F Watson, Bent Weber, Jill A Miwa, et al.
Science Advances
|
November 22, 2017
Atomically engineered electron spin lifetimes of 30 s in silicon
Thomas F Watson, Bent Weber, Yu-Ling Hsueh, et al.
Nanoscale
|
July 31, 2013
Atomistic modeling of metallic nanowires in silicon
Hoon Ryu, Sunhee Lee, Bent Weber, et al.
Psychiatric Services (Washington, D.C.)
|
July 29, 2021
Creation of a Longitudinal Legal Data Set to Support Legal Epidemiology Studies of Mental Health Insurance Legislation
Megan D Douglas, Samantha Bent Weber, Claire Bass, et al.
Nanotechnology
|
February 5, 2024
Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure
Michael S Lodge, Elizabeth Marcellina, Ziming Zhu, et al.
Nanoscale
|
August 6, 2016
Reductive exfoliation of substoichiometric MoS2 bilayers using hydrazine salts
Torben Daeneke, Rhiannon M Clark, Benjamin J Carey, et al.
Page
of 4