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Biegelsen

Showing results (1-10 of 26) with videos related to

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Physical Review. B, Condensed Matter|September 1, 1986
Electron-nuclear double-resonance experiments in hydrogenated amorphous siliconStutzmann, Biegelsen
Physical Review Letters|April 18, 1988
Dangling or floating bonds in amorphous silicon?Stutzmann, Biegelsen
Physical Review. B, Condensed Matter|March 1, 1986
Hyperfine studies of dangling bonds in amorphous siliconBiegelsen, Stutzmann
Physical Review. B, Condensed Matter|November 15, 1989
Microscopic nature of coordination defects in amorphous siliconStutzmann, Biegelsen
Physical Review. B, Condensed Matter|March 15, 1985
Identification of deep-gap states in a-Si:H by photo- depopulation-induced electron-spin resonanceJohnson, Biegelsen
Physical Review. B, Condensed Matter|August 15, 1991
Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxyBringans, Biegelsen, Swartz
Physical Review. B, Condensed Matter|April 15, 1987
Detailed investigation of doping in hydrogenated amorphous silicon and germaniumStutzmann, Biegelsen, Street
Physical Review. B, Condensed Matter|March 15, 1990
Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyBiegelsen, Bringans, Northrup, et al.
Physical Review. B, Condensed Matter|August 15, 1990
Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyBiegelsen, Bringans, Northrup, et al.
Physical Review Letters|July 23, 1990
Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopyBiegelsen, Bringans, Northrup, et al.
Pageof 3

Showing results (1-10 of 26) with videos related to

Sort By:
Pageof 3
Physical Review. B, Condensed Matter|September 1, 1986
Electron-nuclear double-resonance experiments in hydrogenated amorphous siliconStutzmann, Biegelsen
Physical Review Letters|April 18, 1988
Dangling or floating bonds in amorphous silicon?Stutzmann, Biegelsen
Physical Review. B, Condensed Matter|March 1, 1986
Hyperfine studies of dangling bonds in amorphous siliconBiegelsen, Stutzmann
Physical Review. B, Condensed Matter|November 15, 1989
Microscopic nature of coordination defects in amorphous siliconStutzmann, Biegelsen
Physical Review. B, Condensed Matter|March 15, 1985
Identification of deep-gap states in a-Si:H by photo- depopulation-induced electron-spin resonanceJohnson, Biegelsen
Physical Review. B, Condensed Matter|August 15, 1991
Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxyBringans, Biegelsen, Swartz
Physical Review. B, Condensed Matter|April 15, 1987
Detailed investigation of doping in hydrogenated amorphous silicon and germaniumStutzmann, Biegelsen, Street
Physical Review. B, Condensed Matter|March 15, 1990
Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyBiegelsen, Bringans, Northrup, et al.
Physical Review. B, Condensed Matter|August 15, 1990
Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyBiegelsen, Bringans, Northrup, et al.
Physical Review Letters|July 23, 1990
Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopyBiegelsen, Bringans, Northrup, et al.
Pageof 3