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Optics Express|October 24, 2013
Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayersParvaneh Ravadgar, Ray-Hua Horng, Shu-De Yao, et al.
Optics Express|June 13, 2014
Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substratesRay-Hua Horng, Bing-Rui Wu, Ching-Ho Tien, et al.
Optics Express|October 10, 2013
P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layersRay-Hua Horng, Bing-Rui Wu, Chi-Feng Weng, et al.
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