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Nanotechnology|June 29, 2022
Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2thin filmBoncheol Ku, Yue Ma, Hoonhee Han, et al.
ACS Applied Materials & Interfaces|December 2, 2023
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial SynapsesYu-Rim Jeon, Duho Kim, Boncheol Ku, et al.
Nanoscale|February 12, 2025
Hf0.5Zr0.5O2/HfO2/Hf0.5Zr0.5O2 laminated thin films and CF4 plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistorsKyungsoo Park, Chulwon Chung, Boncheol Ku, et al.
Nanoscale|April 3, 2025
Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devicesJunhyeok Park, Chulwon Chung, Boncheol Ku, et al.
Nanotechnology|July 28, 2018
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching deviceSohyeon Kim, Yawar Abbas, Yu-Rim Jeon, et al.
Scientific Reports|January 21, 2018
Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic DeviceYawar Abbas, Yu-Rim Jeon, Andrey Sergeevich Sokolov, et al.
ACS Applied Materials & Interfaces|June 30, 2019
Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM DeviceYu-Rim Jeon, Yawar Abbas, Andrey Sergeevich Sokolov, et al.
Journal of Nanoscience and Nanotechnology|March 31, 2011
Lubrication characteristics of nano-oil with different degrees of surface hardness of sliding membersBoncheol Ku, Youngcheol Han, Kwangho Lee, et al.
Nanoscale|June 30, 2020
The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computingHaider Abbas, Yawar Abbas, Gul Hassan, et al.
ACS Applied Materials & Interfaces|November 1, 2021
Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin FilmDuho Kim, Yu-Rim Jeon, Boncheol Ku, et al.
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