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Branz

Showing results (1-10 of 61) with videos related to

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Physical Review. B, Condensed Matter|October 15, 1988
Charge-trapping model of metastability in doped hydrogenated amorphous siliconBranz
Physical Review. B, Condensed Matter|March 15, 1989
Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energiesBranz
Physical Review. B, Condensed Matter|April 15, 1990
Comment on "Excitation-energy dependence of optically induced ESR in a-Si:H"Branz
Physical Review. B, Condensed Matter|October 15, 1990
Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsBranz, Silver
Physical Review. B, Condensed Matter|November 15, 1995
Hydrogen diffusion in a-Si:H: Solution of the tracer equations including capture by exchangeKemp, Branz
Physical Review. B, Condensed Matter|September 15, 1993
Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous siliconBranz, Schiff
Health Management Technology|July 17, 2013
Transitioning to a vendor-neutral image archiveKaren Branz
Physical Review Letters|October 4, 2000
Nonradiative electron-hole recombination by a low-barrier pathway in hydrogenated silicon semiconductorsZhang, Branz
Physical Review. B, Condensed Matter|March 15, 1993
Analytic solution of trap-controlled tracer diffusion in amorphous solidsKemp, Branz
Physical Review. B, Condensed Matter|December 15, 1993
Evidence for the hydrogen-glass model of metastability annealing in phosphorus-doped amorphous siliconBranz, Iwaniczko
Pageof 7

Showing results (1-10 of 61) with videos related to

Sort By:
Pageof 7
Physical Review. B, Condensed Matter|October 15, 1988
Charge-trapping model of metastability in doped hydrogenated amorphous siliconBranz
Physical Review. B, Condensed Matter|March 15, 1989
Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energiesBranz
Physical Review. B, Condensed Matter|April 15, 1990
Comment on "Excitation-energy dependence of optically induced ESR in a-Si:H"Branz
Physical Review. B, Condensed Matter|October 15, 1990
Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsBranz, Silver
Physical Review. B, Condensed Matter|November 15, 1995
Hydrogen diffusion in a-Si:H: Solution of the tracer equations including capture by exchangeKemp, Branz
Physical Review. B, Condensed Matter|September 15, 1993
Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous siliconBranz, Schiff
Health Management Technology|July 17, 2013
Transitioning to a vendor-neutral image archiveKaren Branz
Physical Review Letters|October 4, 2000
Nonradiative electron-hole recombination by a low-barrier pathway in hydrogenated silicon semiconductorsZhang, Branz
Physical Review. B, Condensed Matter|March 15, 1993
Analytic solution of trap-controlled tracer diffusion in amorphous solidsKemp, Branz
Physical Review. B, Condensed Matter|December 15, 1993
Evidence for the hydrogen-glass model of metastability annealing in phosphorus-doped amorphous siliconBranz, Iwaniczko
Pageof 7