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C B Zota

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Nanotechnology|February 24, 2017
Gated Hall effect measurements on selectively grown InGaAs nanowiresF Lindelöw, C B Zota, E Lind
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 18, 2018
III-V heterostructure tunnel field-effect transistorC Convertino, C B Zota, H Schmid, et al.
Pageof 1

Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Nanotechnology|February 24, 2017
Gated Hall effect measurements on selectively grown InGaAs nanowiresF Lindelöw, C B Zota, E Lind
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 18, 2018
III-V heterostructure tunnel field-effect transistorC Convertino, C B Zota, H Schmid, et al.
Pageof 1